HUASHUO-Single FETs, MOSFETs-HSBB2627
- HUASHUO
Drain to Source Voltage;20V/Gate Charge(Qg);63nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;29W/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);431pF/Current - Continuous Drain(Id);48A/Ciss-Input Capacitance;5.783nFP-Channel 20V 48A... Read more
$2.10 Excl. VAT
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