HUASHUO-Single FETs, MOSFETs-HSBB3016
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;43.4W/RDS(on);4.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more
$2.43 Excl. VAT
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