HUASHUO-Single FETs, MOSFETs-HSBB3016

Description

Drain to Source Voltage;30V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;43.4W/RDS(on);4.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.875nF


N-Channel 30V 30A 43.4W PRPAK3x3-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;43.4W/RDS(on);4.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);39.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;43.4W/RDS(on);4.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.875nF


    N-Channel 30V 30A 43.4W PRPAK3x3-8L

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