HUASHUO-Single FETs, MOSFETs-HSBB3060
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);4.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;21W/RDS(on);9.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input... Read more
$0.57 Excl. VAT
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