HUASHUO-Single FETs, MOSFETs-HSBB3062B
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);4.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;26W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more
$1.80 Excl. VAT
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