HUASHUO-Single FETs, MOSFETs-HSBB3062B

Description

Drain to Source Voltage;30V/Gate Charge(Qg);4.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;26W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;396pF/Output Capacitance(Coss);260pF


30V 10.5mΩ@10V 1 N-channel 26W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);4.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;26W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

$1.80 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);4.2nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;26W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;396pF/Output Capacitance(Coss);260pF


    30V 10.5mΩ@10V 1 N-channel 26W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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