HUASHUO-Single FETs, MOSFETs-HSBB3214

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9.63nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;26W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);153pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.175nF


N-Channel Array 30V 33A 26W PRPAK3x3-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9.63nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;26W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);153pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$1.92 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9.63nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;26W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);153pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.175nF


    N-Channel Array 30V 33A 26W PRPAK3x3-8L

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