HUASHUO-Single FETs, MOSFETs-HSBB3303

Description

Drain to Source Voltage;30V/Gate Charge(Qg);12.6nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.345nF/Output Capacitance(Coss);194pF


P-Channel 30V 35A 35W PRPAK3x3-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);12.6nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);12.6nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.345nF/Output Capacitance(Coss);194pF


    P-Channel 30V 35A 35W PRPAK3x3-8L

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