HUASHUO-Single FETs, MOSFETs-HSBB35P02

Description

Drain to Source Voltage;20V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;40W/RDS(on);7.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);421pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));620mV/Ciss-Input Capacitance;3.483nF/Output Capacitance(Coss);529pF


20V 7.9mΩ@4.5V 1 P-Channel 40W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;40W/RDS(on);7.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);421pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));620mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;40W/RDS(on);7.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);421pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));620mV/Ciss-Input Capacitance;3.483nF/Output Capacitance(Coss);529pF


    20V 7.9mΩ@4.5V 1 P-Channel 40W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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