HUASHUO-Single FETs, MOSFETs-HSBB35P02
- HUASHUO
Drain to Source Voltage;20V/Gate Charge(Qg);42nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;40W/RDS(on);7.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);421pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));620mV/Ciss-Input... Read more
$1.98 Excl. VAT
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