HUASHUO-Single FETs, MOSFETs-HSBB3909

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);234pF/Current - Continuous Drain(Id);24A;27A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.213nF


N-Channel+P-Channel Array 30V 24A 27A 20W PRPAK3x3-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);234pF/Current - Continuous Drain(Id);24A;27A/Gate... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);234pF/Current - Continuous Drain(Id);24A;27A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.213nF


    N-Channel+P-Channel Array 30V 24A 27A 20W PRPAK3x3-8L

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