HUASHUO-Single FETs, MOSFETs-HSBB3909
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);7.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);234pF/Current - Continuous Drain(Id);24A;27A/Gate... Read more
$1.89 Excl. VAT
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