HUASHUO-Single FETs, MOSFETs-HSBB4115

Description

Drain to Source Voltage;40V/Gate Charge(Qg);27.9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;52.1W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);39A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF


P-Channel 40V 39A 52.1W PRPAK3x3-8L

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);27.9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;52.1W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);39A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$5.28 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);27.9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;52.1W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);39A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF


    P-Channel 40V 39A 52.1W PRPAK3x3-8L

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