HUASHUO-Single FETs, MOSFETs-HSBB4600

Description

Drain to Source Voltage;20V/Gate Charge(Qg);20nC@4.5V;33nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;40W/RDS(on);7.8mΩ@4.5V;17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF;158pF/Current - Continuous Drain(Id);12A;10A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;1.65nF;1.25nF/Output Capacitance(Coss);225pF;194pF


20V 1 N-Channel + 1 P-Channel 40W PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);20nC@4.5V;33nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;40W/RDS(on);7.8mΩ@4.5V;17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF;158pF/Current -... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);20nC@4.5V;33nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;40W/RDS(on);7.8mΩ@4.5V;17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF;158pF/Current - Continuous Drain(Id);12A;10A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;1.65nF;1.25nF/Output Capacitance(Coss);225pF;194pF


    20V 1 N-Channel + 1 P-Channel 40W PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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