HUASHUO-Single FETs, MOSFETs-HSBB4600
- HUASHUO
Drain to Source Voltage;20V/Gate Charge(Qg);20nC@4.5V;33nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;40W/RDS(on);7.8mΩ@4.5V;17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF;158pF/Current -... Read more
$3.81 Excl. VAT
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