HUASHUO-Single FETs, MOSFETs-HSBB4903

Description

Drain to Source Voltage;40V/Gate Charge(Qg);6nC@4.5V;9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;21W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);20A;18A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;602pF;1.168nF/Output Capacitance(Coss);80pF;102pF


40V 30mΩ@10V 1 N-Channel + 1 P-Channel 21W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);6nC@4.5V;9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;21W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current -... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);6nC@4.5V;9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;21W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);58pF/Current - Continuous Drain(Id);20A;18A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;602pF;1.168nF/Output Capacitance(Coss);80pF;102pF


    40V 30mΩ@10V 1 N-Channel + 1 P-Channel 21W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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