HUASHUO-Single FETs, MOSFETs-HSBB6058

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;20.8W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;512pF/Output Capacitance(Coss);171pF


60V 12mΩ@10V 1 N-channel 20.8W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);11.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;20.8W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$2.61 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;20.8W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;512pF/Output Capacitance(Coss);171pF


    60V 12mΩ@10V 1 N-channel 20.8W PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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