HUASHUO-Single FETs, MOSFETs-HSBB6115

Description

Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5.2W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.635nF/Output Capacitance(Coss);224pF


P-Channel 60V 26A 5.2W PRPAK3x3-8L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5.2W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$1.32 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;5.2W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.635nF/Output Capacitance(Coss);224pF


    P-Channel 60V 26A 5.2W PRPAK3x3-8L

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