HUASHUO-Single FETs, MOSFETs-HSBB6214

Description

Drain to Source Voltage;60V/Gate Charge(Qg);19nC@10V/Number;2 N-Channel/Pd - Power Dissipation;21W/RDS(on);42mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1.027nF


N-Channel Array 60V 16A 21W PRPAK3x3-8L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);19nC@10V/Number;2 N-Channel/Pd - Power Dissipation;21W/RDS(on);42mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);19nC@10V/Number;2 N-Channel/Pd - Power Dissipation;21W/RDS(on);42mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1.027nF


    N-Channel Array 60V 16A 21W PRPAK3x3-8L

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