HUASHUO-Single FETs, MOSFETs-HSBB70N02

Description

Drain to Source Voltage;20V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);3.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.05nF/Output Capacitance(Coss);360pF


N-Channel 20V 70A 40W PRPAK3x3-8L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);3.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;40W/RDS(on);3.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.05nF/Output Capacitance(Coss);360pF


    N-Channel 20V 70A 40W PRPAK3x3-8L

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