HUASHUO-Single FETs, MOSFETs-HSBB8008
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more
$5.16 Excl. VAT
-
Guaranteed secure & safe checkout.