HUASHUO-Single FETs, MOSFETs-HSBB8008

Description

Drain to Source Voltage;30V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;3.1nF


N-Channel 30V 50A 31W PRPAK3x3-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);310pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;3.1nF


    N-Channel 30V 50A 31W PRPAK3x3-8L

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