HUASHUO-Single FETs, MOSFETs-HSBG2301

Description

Drain to Source Voltage;20V/Gate Charge(Qg);3nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;270mW/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));550mV/Ciss-Input Capacitance;248pF/Output Capacitance(Coss);30pF


20V 130mΩ@4.5V 1 P-Channel 270mW DFN1006-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);3nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;270mW/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));550mV/Ciss-Input... Read more

$1.47 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);3nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;270mW/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));550mV/Ciss-Input Capacitance;248pF/Output Capacitance(Coss);30pF


    20V 130mΩ@4.5V 1 P-Channel 270mW DFN1006-3 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account