HUASHUO-Single FETs, MOSFETs-HSBG2N7002K

Description

Drain to Source Voltage;60V/Gate Charge(Qg);850pC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;28pF/Output Capacitance(Coss);8.5pF


60V 1.4Ω@10V 1 N-channel 1.1W DFN1006-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);850pC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$1.56 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);850pC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;28pF/Output Capacitance(Coss);8.5pF


    60V 1.4Ω@10V 1 N-channel 1.1W DFN1006-3 Single FETs, MOSFETs RoHS

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