HUASHUO-Single FETs, MOSFETs-HSCA2030

Description

Drain to Source Voltage;20V/Gate Charge(Qg);38nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;31W/RDS(on);5.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);325pF/Current - Continuous Drain(Id);56A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.165nF


N-Channel Array 20V 56A 31W Surface Mount DFN-8-EP(3x3)

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);38nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;31W/RDS(on);5.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);325pF/Current - Continuous Drain(Id);56A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);38nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;31W/RDS(on);5.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);325pF/Current - Continuous Drain(Id);56A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.165nF


    N-Channel Array 20V 56A 31W Surface Mount DFN-8-EP(3x3)

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