HUASHUO-Single FETs, MOSFETs-HSCB0010E
- HUASHUO
Drain to Source Voltage;100V/Gate Charge(Qg);6.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);39mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$2.88 Excl. VAT
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