HUASHUO-Single FETs, MOSFETs-HSCB20N06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3W/RDS(on);12mΩ@10V;16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;807pF/Output Capacitance(Coss);265pF


60V 1 N-channel 3W DFN-6L(2x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3W/RDS(on);12mΩ@10V;16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$2.31 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3W/RDS(on);12mΩ@10V;16mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;807pF/Output Capacitance(Coss);265pF


    60V 1 N-channel 3W DFN-6L(2x2) Single FETs, MOSFETs RoHS

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