HUASHUO-Single FETs, MOSFETs-HSCE1218

Description

Drain to Source Voltage;12V/Gate Charge(Qg);41nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;83W/RDS(on);5.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.13nF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.91nF/Output Capacitance(Coss);1.42nF


P-Channel 12V 60A 83W Surface Mount DFN-8(3.3x3.3)

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);41nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;83W/RDS(on);5.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.13nF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$5.31 Excl. VAT

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);41nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;83W/RDS(on);5.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.13nF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.91nF/Output Capacitance(Coss);1.42nF


    P-Channel 12V 60A 83W Surface Mount DFN-8(3.3x3.3)

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