HUASHUO-Single FETs, MOSFETs-HSH0048A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V;19.3nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;130W/RDS(on);6.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.22nF/Output Capacitance(Coss);695pF


100V 6.6mΩ@10V 1 N-channel 130W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V;19.3nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;130W/RDS(on);6.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);45nC@10V;19.3nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;130W/RDS(on);6.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.22nF/Output Capacitance(Coss);695pF


    100V 6.6mΩ@10V 1 N-channel 130W TO-263 Single FETs, MOSFETs RoHS

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