HUASHUO-Single FETs, MOSFETs-HSH0076A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);200nC@10V/Number;1 N-channel/Pd - Power Dissipation;430W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);388pF/Current - Continuous Drain(Id);308A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;13.37nF


N-Channel 100V 308A 430W Surface Mount TO-263

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);200nC@10V/Number;1 N-channel/Pd - Power Dissipation;430W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);388pF/Current - Continuous Drain(Id);308A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$5.40 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);200nC@10V/Number;1 N-channel/Pd - Power Dissipation;430W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);388pF/Current - Continuous Drain(Id);308A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;13.37nF


    N-Channel 100V 308A 430W Surface Mount TO-263

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