HUASHUO-Single FETs, MOSFETs-HSH0084A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);112nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;260W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.425nF/Output Capacitance(Coss);1.621nF


100V 3mΩ@10V 1 N-channel 260W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);112nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;260W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);112nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;260W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.425nF/Output Capacitance(Coss);1.621nF


    100V 3mΩ@10V 1 N-channel 260W TO-263 Single FETs, MOSFETs RoHS

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