HUASHUO-Single FETs, MOSFETs-HSH047P06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);280nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;183W/RDS(on);4.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);680pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;17.9nF/Output Capacitance(Coss);1.701nF


P-Channel 60V 150A 183W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);280nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;183W/RDS(on);4.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);680pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$6.54 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);280nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;183W/RDS(on);4.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);680pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;17.9nF/Output Capacitance(Coss);1.701nF


    P-Channel 60V 150A 183W Surface Mount TO-263

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