HUASHUO-Single FETs, MOSFETs-HSH100N15

Description

Drain to Source Voltage;150V/Gate Charge(Qg);100nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);7.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.5pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.88nF


N-Channel 150V 100A 178W Surface Mount TO-263

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);100nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);7.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.5pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);100nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);7.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.5pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.88nF


    N-Channel 150V 100A 178W Surface Mount TO-263

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