HUASHUO-Single FETs, MOSFETs-HSH100P06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;5.2nF


P-Channel 60V 100A 210W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$2.82 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;5.2nF


    P-Channel 60V 100A 210W Surface Mount TO-263

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