HUASHUO-Single FETs, MOSFETs-HSH110P04

Description

Drain to Source Voltage;40V/Gate Charge(Qg);115nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);722pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.09nF


P-Channel 40V 110A 200W Surface Mount TO-263

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);115nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);722pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$1.98 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);115nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);722pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.09nF


    P-Channel 40V 110A 200W Surface Mount TO-263

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