HUASHUO-Single FETs, MOSFETs-HSH15810

Description

Drain to Source Voltage;100V/Gate Charge(Qg);72nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.725nF


N-Channel 100V 120A 227W Surface Mount TO-263

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);72nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);72nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.725nF


    N-Channel 100V 120A 227W Surface Mount TO-263

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