HUASHUO-Single FETs, MOSFETs-HSH3119
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.21nF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more
$2.13 Excl. VAT
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