HUASHUO-Single FETs, MOSFETs-HSH3119

Description

Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.21nF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;12.7nF/Output Capacitance(Coss);1.38nF


P-Channel 30V 150A 200W Surface Mount TO-263

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.21nF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);22nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/RDS(on);3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.21nF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;12.7nF/Output Capacitance(Coss);1.38nF


    P-Channel 30V 150A 200W Surface Mount TO-263

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