HUASHUO-Single FETs, MOSFETs-HSH4070

Description

Drain to Source Voltage;40V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);2.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);112pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;3.872nF


N-Channel 40V 170A 178W Surface Mount TO-263

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);2.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);112pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);2.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);112pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;3.872nF


    N-Channel 40V 170A 178W Surface Mount TO-263

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