HUASHUO-Single FETs, MOSFETs-HSH6117

Description

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);241pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.635nF


P-Channel 60V 80A 200W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);241pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$2.49 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);241pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.635nF


    P-Channel 60V 80A 200W Surface Mount TO-263

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