HUASHUO-Single FETs, MOSFETs-HSH8004

Description

Drain to Source Voltage;80V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;192W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);175A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.45nF


N-Channel 80V 175A 192W Surface Mount TO-263

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;192W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);175A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;192W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);175A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.45nF


    N-Channel 80V 175A 192W Surface Mount TO-263

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