HUASHUO-Single FETs, MOSFETs-HSH80N20
- HUASHUO
Drain to Source Voltage;200V/Gate Charge(Qg);115nC@10V/Number;1 N-channel/Pd - Power Dissipation;370W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);80A/Ciss-Input Capacitance;7.49nFN-Channel 200V 80A... Read more
$3.84 Excl. VAT
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