HUASHUO-Single FETs, MOSFETs-HSH8119

Description

Drain to Source Voltage;80V/Gate Charge(Qg);190nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;13.3nF/Output Capacitance(Coss);390pF


P-Channel 80V 90A 210W Surface Mount TO-263

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);190nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

$3.39 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);190nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;13.3nF/Output Capacitance(Coss);390pF


    P-Channel 80V 90A 210W Surface Mount TO-263

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