HUASHUO-Single FETs, MOSFETs-HSH90P06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);170nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.4V


P-Channel 60V 85A 210W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);170nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.4VP-Channel 60V 85A 210W... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);170nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.4V


    P-Channel 60V 85A 210W Surface Mount TO-263

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