HUASHUO-Single FETs, MOSFETs-HSK0008

Description

Drain to Source Voltage;100V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16.4pF/Current - Continuous Drain(Id);2.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;508pF


N-Channel 100V 2.2A 1.5W Surface Mount SOT-89

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16.4pF/Current - Continuous Drain(Id);2.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16.4pF/Current - Continuous Drain(Id);2.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;508pF


    N-Channel 100V 2.2A 1.5W Surface Mount SOT-89

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