HUASHUO-Single FETs, MOSFETs-HSK4101

Description

Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;620pF


P-Channel 40V 5.8A 1.4W Surface Mount SOT-89

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;620pF


    P-Channel 40V 5.8A 1.4W Surface Mount SOT-89

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