HUASHUO-Single FETs, MOSFETs-HSK4101
- HUASHUO
Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);70mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more
$2.40 Excl. VAT
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