HUASHUO-Single FETs, MOSFETs-HSK4N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;690pF/Output Capacitance(Coss);31pF


N-Channel 100V 4A 1.25W Surface Mount SOT-89

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;690pF/Output Capacitance(Coss);31pF


    N-Channel 100V 4A 1.25W Surface Mount SOT-89

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