HUASHUO-Single FETs, MOSFETs-HSK7P10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);25nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.7W/RDS(on);120mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.22nF/Output Capacitance(Coss);58pF


100V 120mΩ@10V 1 P-Channel 1.7W SOT-89 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);25nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.7W/RDS(on);120mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

$3.39 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);25nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.7W/RDS(on);120mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.22nF/Output Capacitance(Coss);58pF


    100V 120mΩ@10V 1 P-Channel 1.7W SOT-89 Single FETs, MOSFETs RoHS

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