HUASHUO-Single FETs, MOSFETs-HSL6115

Description

Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);24mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;3.635nF


P-Channel 60V 19A 2W Surface Mount SOT-223

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);24mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

$4.59 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W/RDS(on);24mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;3.635nF


    P-Channel 60V 19A 2W Surface Mount SOT-223

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