HUASHUO-Single FETs, MOSFETs-HSM0228

Description

Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V


100V 68mΩ@10V 2 N-Channel 1.5W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V100V 68mΩ@10V 2 N-Channel... Read more

$1.32 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V


    100V 68mΩ@10V 2 N-Channel 1.5W SOP-8 Single FETs, MOSFETs RoHS

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