HUASHUO-Single FETs, MOSFETs-HSM24P03

Description

Drain to Source Voltage;30V/Gate Charge(Qg);110nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.1W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);410pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;6.24nF


P-Channel 30V 24A 2.1W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);110nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.1W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);410pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);110nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.1W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);410pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;6.24nF


    P-Channel 30V 24A 2.1W Surface Mount SOP-8

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