HUASHUO-Single FETs, MOSFETs-HSM3056

Description

Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1.476nF


N-Channel 30V 20A 3.1W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1.476nF


    N-Channel 30V 20A 3.1W Surface Mount SOP-8

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