HUASHUO-Single FETs, MOSFETs-HSM4006
- HUASHUO
Drain to Source Voltage;40V/Gate Charge(Qg);18.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);138pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more
$2.88 Excl. VAT
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