HUASHUO-Single FETs, MOSFETs-HSM4435

Description

Drain to Source Voltage;30V/Gate Charge(Qg);12.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.345nF


P-Channel 30V 9.5A 3.1W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);12.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$1.77 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);12.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.345nF


    P-Channel 30V 9.5A 3.1W Surface Mount SOP-8

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