HUASHUO-Single FETs, MOSFETs-HSM4P10D

Description

Drain to Source Voltage;100V/Gate Charge(Qg);17nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.07nF


P-Channel 100V 4A 2W Surface Mount SOP-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);17nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$5.40 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);17nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.07nF


    P-Channel 100V 4A 2W Surface Mount SOP-8

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