HUASHUO-Single FETs, MOSFETs-HSM6006
- HUASHUO
Drain to Source Voltage;60V/Gate Charge(Qg);18.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);18mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);97pF/Current - Continuous Drain(Id);6.3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more
$3.00 Excl. VAT
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