HUASHUO-Single FETs, MOSFETs-HSM6115

Description

Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;5.2W/RDS(on);25mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.635nF


P-Channel 60V 11A 5.2W Surface Mount SOP-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;5.2W/RDS(on);25mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.635nFP-Channel 60V... Read more

$5.64 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);25nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;5.2W/RDS(on);25mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);141pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.635nF


    P-Channel 60V 11A 5.2W Surface Mount SOP-8

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